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MRFE6S9045NR1 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and i ndustrial applications with fre- quencies up to 1000 mhz. the high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. ? typical single - carrier n - cdma performance @ 880 mhz, v dd = 28 volts, i dq = 350 ma, p out = 10 watts avg., is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 22.1 db drain efficiency ? 32% acpr @ 750 khz offset ? - 46 dbc in 30 khz channel bandwidth ? capable of handling 5:1 vswr, @ 32 vdc, 880 mhz, 3 db overdrive, designed for enhanced ruggedness gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 350 ma, p out = 16 watts avg., full frequency band (920 - 960 mhz) power gain ? 20 db drain efficiency ? 46% spectral regrowth @ 400 khz offset = - 62 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 1.5% rms gsm application ? typical gsm performance: v dd = 28 volts, i dq = 350 ma, p out = 45 watts, full frequency band (920 - 960 mhz) power gain ? 20 db drain efficiency ? 68% features ? characterized with series equivalent large - signal impedance parameters ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +66 vdc gate - source voltage v gs - 0.5, + 12 vdc maximum operation voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 81 c, 45 w cw case temperature 79 c, 10 w cw r jc 1.0 1.1 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools (software & tools)/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrfe6s9045n rev. 0, 10/2007 freescale semiconductor technical data 880 mhz, 10 w avg., 28 v single n - cdma lateral n - channel broadband rf power mosfet case 1265 - 09, style 1 to - 270 - 2 plastic MRFE6S9045NR1 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor MRFE6S9045NR1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 3a (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 66 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 a) v gs(th) 1 2 3 vdc gate quiescent voltage (v dd = 28 vdc, i d = 350 madc, measured in functional test) v gs(q) 2.3 3.1 3.8 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1.0 adc) v ds(on) 0.05 0.23 0.3 vdc dynamic characteristics reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.02 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 27 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 81 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 350 ma, p out = 10 w avg., f = 880 mhz, single - carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf power gain g ps 21 22.1 25 db drain efficiency d 30.5 32 ? % adjacent channel power ratio acpr ? -46 -44 dbc input return loss irl ? -19 -9 db (continued)
MRFE6S9045NR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical gsm edge performances (in freescale gsm edge test fixture optimized for 920 - 960 mhz, 50 ohm system) v dd = 28 vdc, i dq = 350 ma, p out = 16 w avg., f = 920 - 960 mhz, gsm edge signal power gain g ps ? 20 ? db drain efficiency d ? 46 ? % error vector magnitude evm ? 1.5 ? % spectral regrowth at 400 khz offset sr1 ? -62 ? dbc spectral regrowth at 600 khz offset sr2 ? -78 ? dbc typical cw performances (in freescale gsm test fixture optimized for 920 - 960 mhz, 50 ohm system) v dd = 28 vdc, i dq = 350 ma, p out = 45 w, f = 920 - 960 mhz power gain g ps ? 20 ? db drain efficiency d ? 68 ? % input return loss irl ? -12 ? db p out @ 1 db compression point (f = 940 mhz) p1db ? 52 ? w typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 350 ma, 865 - 900 mhz bandwidth video bandwidth @ 48 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 10 ? mhz gain flatness in 35 mhz bandwidth @ p out = 10 w avg. g f ? 0.72 ? db gain variation over temperature (-30 c to +85 c) g ? 0.011 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.006 ? dbm/ c
4 rf device data freescale semiconductor MRFE6S9045NR1 figure 1. MRFE6S9045NR1 test circuit schematic z10 0.360 x 0.270 microstrip z11 0.063 x 0.270 microstrip z12 0.360 x 0.065 microstrip z13 0.095 x 0.065 microstrip z14 0.800 x 0.065 microstrip z15 0.260 x 0.065 microstrip z16 0.325 x 0.065 microstrip pcb taconic rf - 35 0.030 , r = 3.5 z1 0.215 x 0.065 microstrip z2 0.221 x 0.065 microstrip z3 0.500 x 0.100 microstrip z4 0.460 x 0.270 microstrip z5 0.040 x 0.270 microstrip z6 0.280 x 0.270 x 0.530 taper z7 0.087 x 0.525 microstrip z8 0.435 x 0.525 microstrip z9 0.057 x 0.525 microstrip r2 v bias v supply rf output rf input dut c3 l1 z1 c2 z2 z3 c1 z4 z5 z6 z7 c4 z8 c6 z9 z10 c14 c12 b1 r3 r1 l2 b2 c7 c5 c9 c8 c10 c16 c17 c18 c15 z11 z12 z13 z15 c11 z16 + + + + c13 z14 table 6. MRFE6S9045NR1 test circuit component designations and values part description part number manufacturer b1 ferrite bead 2743019447 fair rite b2 ferrite bead 2743021447 fair rite c1, c7, c10, c14 47 pf chip capacitors atc100b470jt500xt atc c2, c4, c12 0.8 - 8.0 pf variable capacitors, gigatrim 27291sl johanson c3 15 pf chip capacitor atc100b150jt500xt atc c5, c6 12 pf chip capacitors atc100b120jt500xt atc c8, c9 13 pf chip capacitors atc100b130jt500xt atc c11 7.5 pf chip capacitor atc100b7r5jt500xt atc c13 0.6 - 4.5 pf variable capacitor, gigatrim 27271sl johanson c15, c16, c17 10 f, 35 v tantalum capacitors t491d106k035at kemet c18 220 f, 50 v electrolytic capacitor emvy500ada221mja0g nippon chemi - con l1, l2 12.5 nh inductors a04t - 5 coilcraft r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 560 k , 1/4 w chip resistor crcw120656001fkea vishay r3 12 , 1/4 w chip resistor crcw120612r0fkea vishay
MRFE6S9045NR1 5 rf device data freescale semiconductor figure 2. MRFE6S9045NR1 test circuit component layout c15 to?270/272 surface / bolt down r2 r1 b1 r3 c7 l1 c1 c2 c3 c4 c6 c5 c8 l2 c10 c9 c11 c12 c13 c14 b2 c18 c16 c17 v gg v dd cut out area
6 rf device data freescale semiconductor MRFE6S9045NR1 typical characteristics 960 15 23 800 ?70 50 irl g ps alt1 acpr 22 40 21 30 19 ?30 18 ?40 17 ?50 16 ?60 940 920 900 880 860 840 820 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?15 ?10 d , drain efficiency (%) 0 ?5 d 960 16 23 800 ?70 34 irl g ps alt1 acpr 22 32 21 30 20 ?30 19 ?40 18 ?50 17 ?60 940 920 900 880 860 840 820 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?20 ?15 f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 10 watts avg. d , drain efficiency (%) ?10 0 ?5 f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 20 watts avg. figure 5. two - tone power gain versus output power 200 17 24 i dq = 525 ma p out , output power (watts) pep 22 20 10 g ps , power gain (db) 23 21 350 ma 1 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements 175 ma figure 6. third order intermodulation distortion versus output power ?30 ?10 1 p out , output power (watts) pep 10 ?20 200 ?60 ?40 intermodulation distortion (dbc) imd, third order ?50 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements 20 ?20 d v dd = 28 vdc, p out = 20 w (avg.) i dq = 350 ma, n?cdma is?95 pilot sync, paging, traffic codes 8 through 13 262.5 ma 437.5 ma 19 18 100 i dq = 175 ma 350 ma 525 ma 262.5 ma 437.5 ma 100 v dd = 28 vdc p out = 10 w (avg.) i dq = 350 ma n?cdma is?95 pilot sync, paging traffic codes 8 through 13
MRFE6S9045NR1 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power 10 ?80 ?10 7th order p out , output power (watts) pep 5th order 3rd order ?20 ?30 ?40 1 200 imd, intermodulation distortion (dbc) ?50 ?60 v dd = 28 vdc, i dq = 350 ma, f1 = 880 mhz f2 = 880.1 mhz, two?tone measurements figure 8. intermodulation distortion products versus tone spacing 10 0 im7?l two?tone spacing (mhz) ?10 ?20 ?30 ?40 ?50 ?60 1 100 imd, intermodulation distortion (dbc) v dd = 28 vdc, p out = 48 w (pep), i dq = 350 ma two?tone measurements (f1 + f2)/2 = center frequency of 880 mhz figure 9. pulsed cw output power versus input power 33 56 p6db = 49.21 dbm (83.36 w) p in , input power (dbm) v dd = 28 vdc, i dq = 350 ma, pulsed cw 12 sec(on), 1% duty cycle, f = 880 mhz 54 52 50 46 24 26 25 28 27 31 29 actual ideal 55 51 53 49 30 32 p out , output power (dbm) 48 47 figure 10. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power 0 ?75 p out , output power (watts) avg. 70 ?5 50 ?25 40 ?45 30 ?55 10 110 ?65 20 alt1 d g ps t c = ?30 c acpr d , drain efficiency (%), g ps , power gain (db) v dd = 28 vdc, i dq = 350 ma f = 880 mhz, n?cdma is?95 pilot sync, paging, traffic codes 8 through 13 alt1, channel power (dbc) acpr, adjacent channel power ratio (dbc) 25 c 100 ?70 100 im5?l im5?u im3?u im3?l ?70 im7?u 34 p3db = 48.40 dbm (69.18 w) p1db = 47.38 dbm (54.7 w) 65 60 55 45 35 25 15 5 ?20 ?30 ?35 ?40 ?50 ?60 ?70 ?30 c 85 c 25 c ?15 ?10 85 c 25 c ?30 c ?30 c 85 c 25 c 85 c
8 rf device data freescale semiconductor MRFE6S9045NR1 typical characteristics this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 10 w avg., and d = 32%. mttf calculator available at http:/www.freescale.com/rf. select tools (software & tools)/calculators to access mttf calculators by product. 100 23 1 0 80 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 350 ma f = 880 mhz t c = ?30 c 85 c 10 22 21 19 17 70 60 50 40 30 20 d , drain efficiency (%) g ps d g ps , power gain (db) figure 12. power gain versus output power p out , output power (watts) cw v dd = 24 v g ps , power gain (db) 100 080 20 23 21 20 19 40 60 22 i dq = 350 ma f = 880 mhz 20 18 16 15 10 ?30 c 18 28 v 32 v 85 c 25 c 250 10 8 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature 10 6 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 25 c
MRFE6S9045NR1 9 rf device data freescale semiconductor n - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 14. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 750 khz offset. alt1 measured in 30 khz bandwidth @ 1.98 m hz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) . . . . . . .. . . . . . .. . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . ... . . .. . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .. . . .. . . . . . . . . . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .. . . . . . . .... . . . . . . . ... . . . ... .. .. . .. . .. . . . . . . . . ... . . . . ... . . . . . . . . . . .. ... . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... ... . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . .. .. .. ... . . . . . .. ... . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . .. . . .. . . . . . . . . . . . . . . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . .. . .. ... . . . . . .... . . . . . . . . .. . . . . . . . . . . . . . . . . . . ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr in 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 15. single - carrier n - cdma spectrum ?acpr in 30 khz integrated bw ?alt1 in 30 khz integrated bw +alt1 in 30 khz integrated bw
10 rf device data freescale semiconductor MRFE6S9045NR1 figure 16. series equivalent source and load impedance f mhz z source z load 850 865 880 3.05 + j1.27 3.31 + j1.33 3.16 + j1.33 0.42 + j0.30 0.42 + j0.44 0.45 + j0.60 v dd = 28 vdc, i dq = 350 ma, p out = 10 w avg. 895 910 3.35 + j1.05 3.43 + j1.20 0.48 + j0.74 0.50 + j0.85 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z o = 5 z source f = 850 mhz f = 910 mhz z load f = 910 mhz f = 850 mhz
MRFE6S9045NR1 11 rf device data freescale semiconductor package dimensions
12 rf device data freescale semiconductor MRFE6S9045NR1
MRFE6S9045NR1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor MRFE6S9045NR1 product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 oct. 2007 ? initial release of data sheet
MRFE6S9045NR1 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrfe6s9045n rev. 0, 10/2007

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